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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1646 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= -100V(Min) *Fast Switching Speed *Low Saturation Voltage: VCE(sat)= -0.3V(Max)@IC= -6A APPLICATIONS *This type of power transistor is developed for high-speed switching and features a very low VCE(sat), is ideal for use in switching power supplies,DC/DC converters,motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high current switching. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Total Power Dissipation @TC=25 VALUE -150 -100 -7.0 -10 -20 -6 40 UNIT V V V A A A PT Total Power Dissipation @Ta=25 TJ Tstg Junction Temperature Storage Temperature 1.5 150 -55~150 W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO IEBO hFE-1 hFE-2 hFE-3 COB fT PARAMETER Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance Current-Gain--Bandwidth Product CONDITIONS IC= -6A; IB= -0.3A B 2SA1646 MIN TYP. MAX -0.3 -0.5 -1.2 -1.5 -10 -10 UNIT V V V V A A IC= -8A; IB= -0.4A B IC= -6A; IB= -0.3A B IC= -8A; IB= -0.4A B VCB= -100V ; IE= 0 VEB= -5V; IC= 0 IC= -0.5A ; VCE= -2V IC= -2A ; VCE= -2V IC= -6A ; VCE= -2V IE=0; VCB= -10V;ftest= 1.0MHz IC= -0.5A ; VCE= -10V 100 100 60 250 150 400 pF MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= -6A ,RL= 8.3, IB1= -IB2= -0.3A,VCC= -50V 0.3 1.5 0.4 s s s hFE-2 Classifications M 100-200 L 150-300 K 200-400 isc Websitewww.iscsemi.cn 2 |
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